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An apparatus and method for monitoring the conductivity of a semiconductor wafer during the course of a polishing process. A polishing pad that contacts the wafer has an active electrode and at least one passive electrode, both of which are embedded in the polishing pad. A detecting device is connected to the active and passive electrodes for monitoring the current between the electrodes as the wafer is lapped by the polishing pad. The etch endpoint of the wafer is determined as a function of the magnitude of the current flow.
This is one of the most valuable patents in the world. The patent royalty is more than billions of dollars per year! It became the standard for flattening in high-density semiconductor manufacturing in the 1990s.